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CM200DX-24S
IGBT Module, Dual [Half Bridge], 200 A, 1.2 kV, 1.5 kW, 150 °C
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DX-24S
Newark Part No.73R7445
Product RangeNX- Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 48 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DX-24S
Newark Part No.73R7445
Product RangeNX- Series
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation Pd1.5kW
Power Dissipation1.5kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case Style-
No. of Pins11Pins
IGBT TerminationTab
IGBT TechnologyIGBT 6
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeNX- Series
SVHCTo Be Advised
Product Overview
The CM200DX-24S is a dual IGBTMOD™ Module designed for use in switching applications. The NX-S series module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
Dual N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
1.5kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
11Pins
IGBT Technology
IGBT 6
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation
1.5kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
-
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
NX- Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate