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CM200DU-24NFH
IGBT Module, Dual [Half Bridge], 200 A, 6.5 V, 830 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24NFH
Newark Part No.19K9213
Product RangeNFH Series
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24NFH
Newark Part No.19K9213
Product RangeNFH Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage6.5V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd830W
Power Dissipation830W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeNFH Series
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
6.5V
Power Dissipation Pd
830W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
830W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
NFH Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate