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CM200DU-24F
IGBT Module, Dual [Half Bridge], 200 A, 2.4 V, 890 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24F
Newark Part No.95B1855
Product RangeF Series
Technical Datasheet
No Longer Available
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24F
Newark Part No.95B1855
Product RangeF Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage2.4V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd890W
Power Dissipation890W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM200DU-24F is a 1200V Trench gate design Dual IGBTMOD™ designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 400A Peak collector current
- 200A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
890W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate