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CM1000DXL-24S
IGBT Module, Dual [Half Bridge], 900 A, 1.2 kV, 7.5 kW, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM1000DXL-24S
Newark Part No.58T5719
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 64 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM1000DXL-24S
Newark Part No.58T5719
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current900A
Continuous Collector Current900A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation7.5kW
Power Dissipation Pd7.5kW
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins14Pins
IGBT TerminationStud
IGBT TechnologyIGBT 6
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
900A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
7.5kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
No. of Pins
14Pins
IGBT Technology
IGBT 6
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
900A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
7.5kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate