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MT53E512M64D2HJ-046 WT:B
DRAM, Mobile LPDDR4, 32 Gbit, 512M x 64bit, 2.133 GHz, TFBGA, 556 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT53E512M64D2HJ-046 WT:B
Newark Part No.81AJ0004
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 52 week(s)
| Quantity | Price |
|---|---|
| 100+ | $128.280 |
Price for:Each
Minimum: 1360
Multiple: 1360
$174,460.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E512M64D2HJ-046 WT:B
Newark Part No.81AJ0004
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density32Gbit
DRAM Density32Gbit
Memory Configuration512M x 64bit
DRAM Memory Configuration512M x 64bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
Memory Case StyleTFBGA
IC Case / PackageTFBGA
No. of Pins556Pins
Supply Voltage Nom1.1V
Access Time468ps
IC MountingSurface Mount
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (08-Jul-2021)
Product Overview
MT53E512M64D2HJ-046 WT:B is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel has 8-banks.
- Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL =16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- 512 Meg x 64 configuration, 4GB (32Gb) total density, 4266Mb/s data rate per pin
- 556-ball TFBGA package
- Operating temperature range from –25°C to +85°C
Technical Specifications
DRAM Type
Mobile LPDDR4
DRAM Density
32Gbit
DRAM Memory Configuration
512M x 64bit
Clock Frequency Max
2.133GHz
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Memory Density
32Gbit
Memory Configuration
512M x 64bit
Clock Frequency
2.133GHz
Memory Case Style
TFBGA
No. of Pins
556Pins
Access Time
468ps
Operating Temperature Min
-25°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate