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MT53E512M32D1ZW-046 AIT:B
DRAM, LPDDR4, 16 Gbit, 512M x 32bit, 2.133GHz, TFBGA, 200 Pins
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ManufacturerMICRON
Manufacturer Part NoMT53E512M32D1ZW-046 AIT:B
Newark Part No.80AJ9997
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $88.440 |
| 5+ | $86.060 |
| 10+ | $83.580 |
| 25+ | $82.350 |
| 50+ | $81.140 |
| 100+ | $76.270 |
Price for:Each
Minimum: 1
Multiple: 1
$88.44
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E512M32D1ZW-046 AIT:B
Newark Part No.80AJ9997
Technical Datasheet
DRAM TypeLPDDR4
Memory Density16Gbit
DRAM Density16Gbit
Memory Configuration512M x 32bit
DRAM Memory Configuration512M x 32bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
Memory Case StyleTFBGA
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
Access Time468ps
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
MT53E512M32D1 is a 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
- 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
- 512 Meg x 32 configuration, LPDDR4, 1 die addressing
- 200-ball TFBGA (Ø0.40 SMD) package, 468ps cycle time
- Operating temperature rating range from -40°C to +95°C
Technical Specifications
DRAM Type
LPDDR4
DRAM Density
16Gbit
DRAM Memory Configuration
512M x 32bit
Clock Frequency Max
2.133GHz
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
95°C
MSL
MSL 3 - 168 hours
Memory Density
16Gbit
Memory Configuration
512M x 32bit
Clock Frequency
2.133GHz
Memory Case Style
TFBGA
No. of Pins
200Pins
Access Time
468ps
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate