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MT53E4G32D8GS-046 AIT:C
DRAM, Mobile LPDDR4, 128 Gbit, 4G x 32bit, 2.133 GHz, FBGA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT53E4G32D8GS-046 AIT:C
Newark Part No.48AK5434
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 41 week(s)
| Quantity | Price |
|---|---|
| 100+ | $366.95 |
Price for:Each
Minimum: 1360
Multiple: 1360
$499,052.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E4G32D8GS-046 AIT:C
Newark Part No.48AK5434
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density128Gbit
DRAM Density128Gbit
DRAM Memory Configuration4G x 32bit
Memory Configuration4G x 32bit
Clock Frequency2.133GHz
Clock Frequency Max2.133GHz
IC Case / PackageFBGA
Memory Case StyleFBGA
No. of Pins-
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time468ps
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E4G32D8GS-046 AIT:C is a 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- Frequency range from 2133 to 10MHz (data rate range per pin: 4266-20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
- Programmable and on-the-fly burst lengths (BL =16, 32), up to 8.5GB/s per die x16 channel
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Clock-stop capability, programmable VSS (ODT) termination, single-ended CK and DQS support
- 16GB (128Gb) total density, 4266Mb/s data rate per pin, AEC-Q100 automotive qualified
- 200-ball LFBGA package, -40°C to +95°C operating temperature
Technical Specifications
DRAM Type
Mobile LPDDR4
DRAM Density
128Gbit
Memory Configuration
4G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
FBGA
Supply Voltage Nom
1.1V
Access Time
468ps
Operating Temperature Max
95°C
SVHC
No SVHC (17-Jan-2023)
Memory Density
128Gbit
DRAM Memory Configuration
4G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
FBGA
No. of Pins
-
IC Mounting
Surface Mount
Operating Temperature Min
-40°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate