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| 1+ | $583.770 |
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E2G32D4DE-046 WT:C
Newark Part No.25AK7969
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density64Gbit
Memory Configuration2G x 32bit
Clock Frequency Max2.133GHz
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.8V
IC MountingSurface Mount
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E2G32D4DE-046 WT:C is a mobile LPDDR4 SDRAM with low VDDQ (LPDDR4X). It is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
- Operating voltage range from 1.10V VDD2/0.60V or 1.10V VDDQ
- 2 Gig x 32 configuration, LPDDR4, 1 die count
- 8GB (64Gb) total density, 4266Mb/s data rate per pin
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst length (BL = 16,32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- 200-ball TFBGA package
- Operating temperature range from -25 to 85°C
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Configuration
2G x 32bit
IC Case / Package
TFBGA
Supply Voltage Nom
1.8V
Operating Temperature Min
-25°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Memory Density
64Gbit
Clock Frequency Max
2.133GHz
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate