MT42L16M32D1HE-18 AAT:E

MT42L16M32D1HE-18 AAT:E is a LPDDR2 SDRAM. It is a 512Mb mobile low-power DDR2 SDRAM (LPDDR2) and high-speed CMOS, dynamic random access memory containing 536,870,912 bits. This memory is internally configured as an eight-bank DRAM. Each of the x32’s 134,217,728-bit banks are organized as 8192 rows by 512 columns by 32 bits. It has multiplexed, double data rate, command/address inputs; commands entered on every CK edge. It has bidirectional/differential data strobe per byte of data (DQS/DQS#), programmable READ and WRITE latencies (RL/WL).

• Operating voltage range is 1.2V
• 16Meg x 32 configuration, automotive certified
• Packaging style is 134-ball FBGA, 10mm x 11.5mm
• Cycle time is 1.875ns, ᵗCK RL = 8, LPDDR2, 1die addressing
• Automotive temperature range is –40°C to +105°C, fifth generation
• Clock rate is 533MHz, data rate is 1066Mb/s/pin
• Ultra low-voltage core and I/O power supplies, four-bit prefetch DDR architecture
• Eight internal banks for concurrent operation, per-bank refresh for concurrent operation
• Partial-array self refresh (PASR), deep power-down mode (DPD)
• Selectable output drive strength (DS), clock stop capability