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MSC080SMA120S
Silicon Carbide MOSFET, Single, N Channel, 35 A, 1.2 kV, 0.08 ohm, TO-268 (D3PAK)
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| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $14.140 | $4.110 |
| 10+ | $13.770 | $4.110 |
| 25+ | $13.410 | $4.110 |
| 60+ | $13.040 | $4.110 |
| 120+ | $12.200 | $4.110 |
| 270+ | $11.340 | $4.110 |
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoMSC080SMA120S
Newark Part No.78AH6587
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id35A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor Case StyleTO-268 (D3PAK)
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.8V
Power Dissipation182W
Power Dissipation Pd182W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (04-Feb-2026)
Product Overview
MSC080SMA120S is a 1200V, 80mohm silicon carbide (SiC) power MOSFET in a 3-lead TO-268 (D3PAK) package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.
- Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
- Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
- Superior avalanche ruggedness and short-circuit withstand time
- HV-H3TRB proven capability ensures long-term reliability in high humidity environments
- Lower VGS and standard package enables improved compatibility with standard gate drivers
- Increased creepage distance (notch) improves safety and reliability in high-voltage designs
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Power Dissipation Pd
182W
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-268 (D3PAK)
Rds(on) Test Voltage
20V
Power Dissipation
182W
Operating Temperature Max
175°C
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
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Product Compliance Certificate
Product traceability