DN2535N3-G

The DN2535N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed are desired.

• Low ON-resistance
• Free from secondary breakdown
• Low input and output leakage

Applications

Power Management, Communications & Networking