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APTGX900A170TDP3EG
IGBT Module, Half Bridge, 900 A, 1.7 V, 3.26 kW, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICROCHIP
Manufacturer Part NoAPTGX900A170TDP3EG
Newark Part No.59AM4978
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $320.780 |
| 5+ | $316.020 |
| 10+ | $311.400 |
| 25+ | $292.720 |
Price for:Each
Minimum: 1
Multiple: 1
$320.78
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICROCHIP
Manufacturer Part NoAPTGX900A170TDP3EG
Newark Part No.59AM4978
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current900A
Collector Emitter Saturation Voltage1.7V
Power Dissipation3.26kW
Operating Temperature Max175°C
Transistor Case StyleModule
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.7kV
IGBT TechnologyIGBT 7 [Trench]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
1.7V
Operating Temperature Max
175°C
IGBT Termination
Press Fit
IGBT Technology
IGBT 7 [Trench]
Product Range
-
Continuous Collector Current
900A
Power Dissipation
3.26kW
Transistor Case Style
Module
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate