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MG06300D-BN4MM
IGBT Module, Dual [Half Bridge], 400 A, 1.45 V, 940 W, 150 °C, Module
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Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoMG06300D-BN4MM
Newark Part No.31Y2577
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual NPN
DC Collector Current400A
Continuous Collector Current400A
Collector Emitter Saturation Voltage1.45V
Collector Emitter Saturation Voltage Vce(on)1.45V
Power Dissipation940W
Power Dissipation Pd940W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
400A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation
940W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual NPN
Continuous Collector Current
400A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation Pd
940W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
