IXTH02N450HV

IXTH02N450HV is a very high-voltage N-channel standard MOSFET, specifically designed for demanding, fast-switching power conversion applications that require blocking voltages up to 4.5kV. With a positive temperature coefficient for its on-state resistance, this high-voltage MOSFET is ideally suited for parallel device operation, offering a cost-effective alternative to series-connected lower-voltage MOSFETs. This approach also reduces the complexity of gate drive circuitry, simplifies design, saves PCB space, and enhances overall system reliability. Key application areas include capacitor discharge circuits, high-voltage power supplies, and pulse circuits where linear-mode capabilities are essential. It is also well-suited for laser and X-ray generation systems, high-voltage relay disconnect circuits, and energy tapping applications from the power grid, making it ideal for a wide range of industrial and power distribution uses.

• 4500V drain-source voltage (VDSS)
• 625mohm maximum on-resistance (RDS(ON)) at 25°C
• 0.2A continuous drain current (ID) at 25°C
• 10.6nC gate charge, 1.1K/W thermal resistance, junction-to-case (RthJC)
• 113W power dissipation, 1600ns reverse recovery time
• TO-247HV package