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IXSH20N120L2KHV
Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.208 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXSH20N120L2KHV
Newark Part No.09AN7442
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 250+ | $3.750 |
| 500+ | $3.490 |
| 1000+ | $3.280 |
Price for:Each
Minimum: 450
Multiple: 450
$1,687.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXSH20N120L2KHV
Newark Part No.09AN7442
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id20A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.208ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation136W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.208ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
136W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate