Print Page
IXFN360N10T
Bipolar (BJT) Single Transistor, N Channel, 360 A, 100 V, 2600 µohm, 100 V, 4.5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN360N10T
Newark Part No.03AH0750
Product RangeTrench HiperFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
| Quantity | Price |
|---|---|
| 250+ | $21.400 |
Price for:Each
Minimum: 300
Multiple: 10
$6,420.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN360N10T
Newark Part No.03AH0750
Product RangeTrench HiperFET Series
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id360A
Drain Source Voltage Vds100V
Drain Source On State Resistance2600µohm
Rds(on) Test Voltage100V
Gate Source Threshold Voltage Max4.5V
Power Dissipation830W
Operating Temperature Max175°C
Product RangeTrench HiperFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
100V
Power Dissipation
830W
Product Range
Trench HiperFET Series
Continuous Drain Current Id
360A
Drain Source On State Resistance
2600µohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
