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IXFH80N65X2W
Power MOSFET, N Channel, 650 V, 80 A, 0.038 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH80N65X2WCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.14AN3392
Product RangeX2-Class HiPerFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 300+ | $11.190 |
| 600+ | $10.460 |
| 900+ | $10.160 |
| 1500+ | $9.170 |
| 3000+ | $8.640 |
| 7500+ | $7.590 |
| 15000+ | $7.350 |
| 30000+ | $7.200 |
Price for:Each
Minimum: 300
Multiple: 300
$3,357.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH80N65X2WCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.14AN3392
Product RangeX2-Class HiPerFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id80A
Drain Source On State Resistance0.038ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation890W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeX2-Class HiPerFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
890W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.038ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
X2-Class HiPerFET Series
SVHC
To Be Advised
Technical Docs (1)
Alternatives for IXFH80N65X2W
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate