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IXTP4N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 4 A, 0.85 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP4N65X2Copy
Newark Part No.02AC9842
Your Part Number
45 In Stock
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Available in quantity shown
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $4.570 | $0.308 |
| 10+ | $3.810 | $0.308 |
| 25+ | $3.060 | $0.308 |
| 50+ | $2.300 | $0.308 |
| 100+ | $2.090 | $0.308 |
| 250+ | $1.910 | $0.308 |
| 500+ | $1.870 | $0.308 |
Price for:Each
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Multiple: 1
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP4N65X2Copy
Newark Part No.02AC9842
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id4A
On Resistance Rds(on)0.85ohm
Drain Source On State Resistance0.85ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd80W
Gate Source Threshold Voltage Max5V
Power Dissipation80W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2023)
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.85ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.85ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
80W
Power Dissipation
80W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
