Print Page
IXFP8N85X
MOSFET, N-CH, 850V, 8A, TO-220 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFP8N85X
Newark Part No.71AH4556
Product RangeX-Class HiPerFET
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $5.030 |
| 10+ | $3.390 |
| 25+ | $3.200 |
| 50+ | $3.020 |
| 100+ | $2.830 |
| 250+ | $2.740 |
| 500+ | $2.650 |
Price for:Each
Minimum: 1
Multiple: 1
$5.03
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFP8N85X
Newark Part No.71AH4556
Product RangeX-Class HiPerFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds850V
Continuous Drain Current Id8A
Drain Source On State Resistance0.85ohm
On Resistance Rds(on)0.85ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation Pd200W
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeX-Class HiPerFET
Qualification-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
850V
Drain Source On State Resistance
0.85ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
200W
No. of Pins
3Pins
Product Range
X-Class HiPerFET
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.85ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
200W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
