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SPA08N80C3XKSA1
Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPA08N80C3XKSA1
Newark Part No.98K0551
Also Known AsSPA08N80C3, SP000216310
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.070 |
| 10+ | $2.230 |
| 100+ | $1.380 |
| 500+ | $1.120 |
| 1000+ | $1.040 |
| 2500+ | $0.985 |
Price for:Each
Minimum: 1
Multiple: 1
$3.07
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Product Information
ManufacturerINFINEON
Manufacturer Part NoSPA08N80C3XKSA1
Newark Part No.98K0551
Also Known AsSPA08N80C3, SP000216310
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id8A
On Resistance Rds(on)0.65ohm
Drain Source On State Resistance0.65ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd40W
Gate Source Threshold Voltage Max3V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPA08N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Periodic avalanche rated
- Qualified according to JEDEC for target applications
- Ultra low effective capacitance
- Fully isolated package
- Improved transconductance
- Low specific ON-state resistance
- Field proven CoolMOS™ quality
- Very low energy storage in output capacitance (Eoss)@400V
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Power Management, Alternative Energy, Consumer Electronics
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
0.65ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
40W
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability