IRS21271STRPBF

IRS21271STRPBF is a high voltage, high-speed power MOSFET and IGBT current sensing single channel driver. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation, fully operational to +600V
• Tolerant to negative transient voltage dV/dt immune, output voltage range from 9 to 20V
• Application-specific gate drive range from 12 to 20V (motor drive), 9 to 20V (automotive)
• Undervoltage lockout, 3.3V, 5V, and 15V input logic compatible
• Active low FAULT lead indicates shutdown has occurred, output in phase with input
• Output high short circuit pulsed current is 200mA min (VO=0V, VIN=5V, PW 0= 10µs)
• Output low short circuit pulsed current is 420mA min (VO=15V, VIN=5V, PW 0= 10µs)
• CS input positive going threshold is 250mV typ (VCC=10 to 20V, TA=25°C)
• Turn-on and off propagation delay is 150ns typ (VS=0V, VS=600V, TA=25°C)
• 8 lead SOIC package, ambient temperature range from -40 to 125°C