IRLR2908TRPBF
Power MOSFET, N Channel, 80 V, 30 A, 0.028 ohm, TO-252AA, Surface Mount
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR2908TRPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | Full Reel86AK5418 Re-Reel42Y0440RL Cut Tape42Y0440 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.160 | $2.16 |
| Total Price | $2.16 | ||
| Quantity | Price |
|---|---|
| 1+ | $2.160 |
| 50+ | $1.120 |
| 100+ | $1.020 |
| 250+ | $0.933 |
| 500+ | $0.845 |
| 1000+ | $0.828 |
| 2500+ | $0.811 |
| 5000+ | $0.794 |
| Quantity | Price |
|---|---|
| 2000+ | $0.740 |
| 4000+ | $0.710 |
| 6000+ | $0.679 |
| 10000+ | $0.665 |
| 20000+ | $0.652 |
| 50000+ | $0.638 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR2908TRPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | Full Reel86AK5418 Re-Reel42Y0440RL Cut Tape42Y0440 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 80V |
| Continuous Drain Current Id | 30A |
| On Resistance Rds(on) | 0.0225ohm |
| Drain Source On State Resistance | 0.028ohm |
| Transistor Case Style | TO-252AA |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 120W |
| Gate Source Threshold Voltage Max | 2.5V |
| Power Dissipation | 120W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 80V |
| On Resistance Rds(on) | 0.0225ohm |
| Transistor Case Style | TO-252AA |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.5V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.028ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 120W |
| Power Dissipation | 120W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |