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IRLR2905TRPBF
Power MOSFET, N Channel, 55 V, 42 A, 27 mohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLR2905TRPBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5416
Re-Reel40M7986RL
Cut Tape40M7986
Also Known AsSP001558410
Your Part Number
13,930 In Stock
24,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.690 | $1.69 |
| Total Price | $1.69 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.690 |
| 50+ | $0.799 |
| 100+ | $0.711 |
| 250+ | $0.634 |
| 500+ | $0.557 |
| 1000+ | $0.546 |
| 2500+ | $0.535 |
| 5000+ | $0.524 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $0.555 |
| 6000+ | $0.506 |
| 10000+ | $0.496 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLR2905TRPBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5416
Re-Reel40M7986RL
Cut Tape40M7986
Also Known AsSP001558410
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id42A
Drain Source On State Resistance27mohm
On Resistance Rds(on)0.027ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Power Dissipation Pd110W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLR2905TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
27mohm
Transistor Case Style
TO-252AA
Power Dissipation Pd
110W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
42A
On Resistance Rds(on)
0.027ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability