
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $6.240 | $31.20 |
| Total Price | $31.20 | ||
| Quantity | Price |
|---|---|
| 5+ | $6.240 |
| 10+ | $4.170 |
| 15+ | $3.870 |
| 25+ | $3.580 |
| 50+ | $3.280 |
| 125+ | $2.990 |
| 250+ | $2.860 |
| 500+ | $2.720 |
| Quantity | Price |
|---|---|
| 4000+ | $2.350 |
| 12000+ | $2.300 |
| 20000+ | $2.260 |
Product Information
Product Overview
IRL7472L1TRPBF is a 40V single N-channel StrongIRFET™ power MOSFET in a DirectFET™ L8 package. It is optimized for low RDS(on) and high current capability. The device is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Application includes brushed motor drive applications, BLDC Motor drive applications, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V min (VGS = 0V, ID = 250µA, TJ = 25°C)
- Breakdown voltage temp. coefficient is 30mV/°C typ (25°C, ID = 5.0m)
- Static drain-to-source on-resistance is 0.34mohm typ (VGS = 10V, ID = 195A, TJ = 25°C)
- Gate threshold voltage range from 1.0 to 2.5V (VDS = VGS, ID = 250µA, TJ = 25°C)
- Internal gate resistance is 1.0 ohm typ (TJ = 25°C)
- Direct FET large can (L8) package, operating junction range from -55 to + 175°C
Technical Specifications
N Channel
40V
340µohm
DirectFET L8
10V
1.7V
11Pins
-
MSL 1 - Unlimited
N Channel
375A
450µohm
Surface Mount
341W
341W
175°C
-
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for IRL7472L1TRPBF
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