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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFU4510PBF
Newark Part No.39AH8939
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id56A
On Resistance Rds(on)0.0111ohm
Drain Source On State Resistance0.0139ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Power Dissipation Pd143W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation143W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0111ohm
Transistor Case Style
TO-251AA
Power Dissipation Pd
143W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.0139ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
143W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability