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IRFR5305TRLPBF
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRLPBFCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel32AC0712
Re-Reel89Y7292RL
Cut Tape89Y7292
Your Part Number
2,865 In Stock
6,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.010 | $2.01 |
| Total Price | $2.01 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.010 |
| 50+ | $1.330 |
| 100+ | $0.920 |
| 250+ | $0.836 |
| 500+ | $0.751 |
| 1000+ | $0.699 |
| 2500+ | $0.672 |
| 5000+ | $0.644 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.518 |
| 9000+ | $0.468 |
| 15000+ | $0.459 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRLPBFCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel32AC0712
Re-Reel89Y7292RL
Cut Tape89Y7292
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id31A
On Resistance Rds(on)0.065ohm
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd110W
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Product Overview
The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.065ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
110W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate