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IRFR3910TRPBF
Power MOSFET, N Channel, 100 V, 16 A, 0.115 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR3910TRPBF
Newark Part No.39M3554
Also Known AsSP001560674
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.20 |
| 10+ | $1.19 |
| 25+ | $1.11 |
| 50+ | $1.03 |
| 100+ | $0.95 |
| 250+ | $0.89 |
| 500+ | $0.83 |
| 1000+ | $0.77 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$6.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR3910TRPBF
Newark Part No.39M3554
Also Known AsSP001560674
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
Drain Source On State Resistance0.115ohm
On Resistance Rds(on)0.115ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd79W
Gate Source Threshold Voltage Max4V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFR3910TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fast switching
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.115ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.115ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
79W
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate