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IRFR120NTRPBF
Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR120NTRPBFCopy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Re-Reel63J6915RL
Cut Tape63J6915
Also Known AsSP001566944
Your Part Number
4,816 In Stock
4,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.380 | $1.38 |
| Total Price | $1.38 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.380 |
| 50+ | $0.676 |
| 100+ | $0.607 |
| 250+ | $0.547 |
| 500+ | $0.486 |
| 1000+ | $0.476 |
| 2500+ | $0.467 |
| 5000+ | $0.457 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR120NTRPBFCopy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Re-Reel63J6915RL
Cut Tape63J6915
Also Known AsSP001566944
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.4A
Drain Source On State Resistance0.21ohm
On Resistance Rds(on)0.21ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd48W
Gate Source Threshold Voltage Max4V
Power Dissipation48W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.21ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
9.4A
On Resistance Rds(on)
0.21ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
48W
Power Dissipation
48W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability