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IRFH7545TRPBF
Power MOSFET, N Channel, 60 V, 85 A, 0.0052 ohm, PQFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Newark Part No.12AC9742
Product RangeStrongIRFET, HEXFET
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.04 |
| 10+ | $1.14 |
| 25+ | $1.10 |
| 50+ | $1.05 |
| 100+ | $1.01 |
| 250+ | $1.00 |
| 500+ | $0.98 |
| 1000+ | $0.96 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.04
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Newark Part No.12AC9742
Product RangeStrongIRFET, HEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id85A
Drain Source On State Resistance0.0052ohm
On Resistance Rds(on)0.0043ohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation Pd83W
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET, HEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0052ohm
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation Pd
83W
No. of Pins
8Pins
Product Range
StrongIRFET, HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
85A
On Resistance Rds(on)
0.0043ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate