IRFB5620PBF
MOSFET, CLASS D, 200V, TO220AB
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB5620PBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | 85R5379 |
| Also Known As | SP001565852 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $2.620 |
| 10+ | $1.700 |
| 100+ | $1.170 |
| 500+ | $0.944 |
| 1000+ | $0.925 |
| 2500+ | $0.906 |
| 5000+ | $0.887 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRFB5620PBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | 85R5379 |
| Also Known As | SP001565852 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 200V |
| Continuous Drain Current Id | 25A |
| Drain Source On State Resistance | 0.0725ohm |
| On Resistance Rds(on) | 0.06ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 144W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 144W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Applications
Audio, Consumer Electronics, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 25A |
| On Resistance Rds(on) | 0.06ohm |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 144W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 200V |
|---|---|
| Drain Source On State Resistance | 0.0725ohm |
| Transistor Case Style | TO-220AB |
| Power Dissipation Pd | 144W |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |