IRFB5620PBF
MOSFET de Potencia, Canal N, 200 V, 25 A, 0.0725 ohm, TO-220AB, Agujero Pasante
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| Cantidad | Precio | Precio promocional |
|---|---|---|
| 1+ | $2.610 | $0.495 |
| 10+ | $1.270 | $0.495 |
| 100+ | $1.140 | $0.495 |
| 500+ | $0.932 | $0.495 |
| 1000+ | $0.931 | $0.495 |
| 3000+ | $0.897 | $0.495 |
Información del producto
Alternativas para el número de pieza IRFB5620PBF
1 producto (s) encontrado (s)
Resumen del producto
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Especificaciones técnicas
N Channel
25
0.06ohm
Through Hole
10
144
175
-
No SVHC (25-Jun-2025)
200
0.0725
TO-220AB
144W
5
3Pines
-
-
Documentos técnicos (3)
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RoHS
RoHS
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