Print Page
IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 6.8 A, 0.022 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Newark Part No.
Re-Reel91Y4762
Cut Tape91Y4762
Product RangeHEXFET Series
Your Part Number
2 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Available in quantity shown
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.836 | $0.84 |
| Total Price | $0.84 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.836 |
| 10+ | $0.546 |
| 25+ | $0.489 |
| 50+ | $0.433 |
| 100+ | $0.376 |
| 250+ | $0.340 |
| 500+ | $0.303 |
| 1000+ | $0.279 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Newark Part No.
Re-Reel91Y4762
Cut Tape91Y4762
Product RangeHEXFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.8A
Continuous Drain Current Id N Channel6.8A
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.027ohm
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
6.8A
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance P Channel
0.022ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.8A
Drain Source On State Resistance N Channel
0.027ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate