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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7606TRPBF
Newark Part No.43AC3291
Product RangeHEXFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.09ohm
On Resistance Rds(on)0.075ohm
Transistor Case StyleµSOIC
Transistor MountingSurface Mount
Power Dissipation Pd1.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.09ohm
Transistor Case Style
µSOIC
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.6A
On Resistance Rds(on)
0.075ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate