IRF7343TRPBF
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7343TRPBFCopy |
| Manufacturer Standard Lead Time | 14 weeks |
| Newark Part No. | 19K8265 |
| Also Known As | SP001565516 |
| Your Part Number | |
| Technical Datasheet |
Need more?
| Quantity | Price |
|---|---|
| 1+ | $1.630 |
| 10+ | $1.030 |
| 100+ | $0.685 |
| 500+ | $0.536 |
| 1000+ | $0.525 |
| 2500+ | $0.515 |
| 10000+ | $0.504 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7343TRPBFCopy |
| Manufacturer Standard Lead Time | 14 weeks |
| Newark Part No. | 19K8265 |
| Also Known As | SP001565516 |
| Technical Datasheet | |
| Channel Type | Complementary N and P Channel |
| Drain Source Voltage Vds N Channel | 55V |
| Continuous Drain Current Id | 4.7A |
| Drain Source Voltage Vds | 55V |
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id N Channel | 4.7A |
| Continuous Drain Current Id P Channel | 4.7A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Drain Source On State Resistance P Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | Complementary N and P Channel |
|---|---|
| Continuous Drain Current Id | 4.7A |
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id P Channel | 4.7A |
| Drain Source On State Resistance P Channel | 0.043ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 2W |
| Product Range | - |
| MSL | - |
| Drain Source Voltage Vds N Channel | 55V |
|---|---|
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id N Channel | 4.7A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 2W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
Associated Products
6 Products Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |