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IRF7303PBF
Dual MOSFET, N Channel, 30 V, 4.9 A, 0.05 ohm
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No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7303PBF
Newark Part No.19K8233
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4.9A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4.9A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.05ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The IRF7303PBF is a 30V dual N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
- Dynamic dV/dt rating
- Surface mount
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
4.9A
Drain Source On State Resistance N Channel
0.05ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate