Print Page
IRF6727MTRPBF
Power MOSFET, N Channel, 30 V, 180 A, 0.0017 ohm, DirectFET MX, Surface Mount
2 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.840 | $14.20 |
| Total Price | $14.20 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.840 |
| 50+ | $1.840 |
| 100+ | $1.270 |
| 250+ | $1.160 |
| 500+ | $1.050 |
| 1000+ | $1.010 |
| 2500+ | $0.978 |
| 5000+ | $0.958 |
Full Reel
| Quantity | Price |
|---|---|
| 4800+ | $0.905 |
| 9600+ | $0.899 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6727MTRPBFCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Full Reel86AK5366
Re-Reel91Y4749RL
Cut Tape91Y4749
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id180A
On Resistance Rds(on)0.00122ohm
Drain Source On State Resistance0.0017ohm
Transistor Case StyleDirectFET MX
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd89W
Power Dissipation89W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET and schottky diode in a DirectFET™ MT package. It is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters.
- Dual sided cooling compatible
- Ultra low package inductance
- Optimized for high frequency switching
- Optimized for both sync.FET and some control FET application
- Low conduction and switching losses
- Product qualification according to JEDEC standard
- High current carrying capability
- Optimum thermal performance
- Compact form factor and high efficiency
- Environmentally friendly
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.00122ohm
Transistor Case Style
DirectFET MX
Rds(on) Test Voltage
10V
Power Dissipation Pd
89W
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
Drain Source On State Resistance
0.0017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
Power Dissipation
89W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate