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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF3205LPBF
Newark Part No.91Y4727
Product RangeHEXFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id110A
Drain Source On State Resistance8000µohm
On Resistance Rds(on)0.008ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd200W
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (08-Jul-2021)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
8000µohm
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
110A
On Resistance Rds(on)
0.008ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
200W
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate