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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF2805STRLPBF
Newark Part No.49AC0320
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id135A
On Resistance Rds(on)0.0039ohm
Drain Source On State Resistance4700µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd200W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0039ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
200W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
135A
Drain Source On State Resistance
4700µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate