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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF135S203
Newark Part No.34AC1767
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds135V
Continuous Drain Current Id129A
Drain Source On State Resistance6700µohm
On Resistance Rds(on)0.0067ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd441W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation441W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
135V
Drain Source On State Resistance
6700µohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
441W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
129A
On Resistance Rds(on)
0.0067ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
441W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability