IR2106STRPBF

IR2106STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation fully operational to +600V, HIN/LIN input logic
• Tolerant to negative transient voltage dV/dt immune, undervoltage lockout for both channels
• Gate drive supply range from 10 to 20V, turn-on and off delay matching is 30ns max (TA=25°C)
• Matched propagation delay for both channels, logic and power ground +/- 5V offset
• Lower di/dt gate driver for better noise immunity, outputs in phase with inputs, COM ground pins
• Output high short circuit pulsed current is 120mA min (VO=0V, PW ≤ 10µs)
• Output low short circuit pulsed current is 250mA min (VO=15V, PW ≤ 10µs)
• Turn-on propagation delay is 220ns typ (VS=0V, VBIAS (VCC, VBS)=15V, CL=1000pF and TA=25°C)
• Turn-off propagation delay is 200ns typ (VS=600V, CL=1000pF and TA=25°C)
• 8 lead SOIC package, ambient temperature range from -40 to 125°C