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IPW60R125CPFKSA1
Power MOSFET, N Channel, 650 V, 25 A, 0.125 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPW60R125CPFKSA1Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.47W3484
Also Known AsIPW60R125CP, SP000088489
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $6.090 |
| 10+ | $5.330 |
| 25+ | $4.410 |
| 50+ | $3.960 |
| 100+ | $3.650 |
| 250+ | $3.410 |
| 500+ | $3.340 |
Price for:Each
Minimum: 1
Multiple: 1
$6.09
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R125CPFKSA1Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.47W3484
Also Known AsIPW60R125CP, SP000088489
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id25A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.125ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd208W
Gate Source Threshold Voltage Max3V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPW60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Very fast switching
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.11ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
208W
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate