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IPT007N06NATMA1
Power MOSFET, N Channel, 60 V, 300 A, 750 µohm, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPT007N06NATMA1Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel86AK5273
Re-Reel50Y2078RL
Cut Tape50Y2078
Also Known AsIPT007N06N, SP001100158
Your Part Number
3,576 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $7.220 | $7.22 |
| Total Price | $7.22 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $7.220 |
| 50+ | $4.660 |
| 100+ | $3.770 |
| 250+ | $3.650 |
| 500+ | $3.490 |
| 1000+ | $3.250 |
| 2500+ | $3.190 |
| 5000+ | $3.120 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $2.940 |
| 6000+ | $2.880 |
| 10000+ | $2.820 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPT007N06NATMA1Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel86AK5273
Re-Reel50Y2078RL
Cut Tape50Y2078
Also Known AsIPT007N06N, SP001100158
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id300A
On Resistance Rds(on)660µohm
Drain Source On State Resistance750µohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Power Dissipation Pd375W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
IPT007N06NATMA1 is a N-channel power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
- Industry's lowest R DS(on)
- Highest current capability up to 300A
- Very low package parasitic and inductances
- Less paralleling and cooling required
- Highest system reliability
- Enabling very compact design
- 100% avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
660µohm
Transistor Case Style
HSOF
Power Dissipation Pd
375W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
300A
Drain Source On State Resistance
750µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
