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IPP110N20NAAKSA1
Power MOSFET, N Channel, 200 V, 88 A, 11 mohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP110N20NAAKSA1Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.50Y2059
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 1+ | $9.630 |
| 10+ | $8.860 |
| 25+ | $8.220 |
| 50+ | $7.780 |
| 100+ | $7.380 |
| 250+ | $6.490 |
| 500+ | $6.340 |
Price for:Each
Minimum: 1
Multiple: 1
$9.63
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP110N20NAAKSA1Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.50Y2059
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id88A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.0099ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
Power Dissipation Pd300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Product Overview
- OptiMOS™ 3 power transistor
- N-channel, normal level
- Excellent gate charge xRDS (on) product (FOM)
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
11mohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
88A
On Resistance Rds(on)
0.0099ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 3 - 168 hours
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate