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IPP057N08N3GXKSA1
MOSFET Transistor, N Channel, 80 A, 80 V, 4.9 mohm, 10 V, 2.8 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP057N08N3GXKSA1
Newark Part No.60R2741
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP057N08N3GXKSA1
Newark Part No.60R2741
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id80A
Drain Source On State Resistance4900µohm
On Resistance Rds(on)0.0049ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max2.8V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
4900µohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0049ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate