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IPP029N06NAKSA1
Power MOSFET, N Channel, 60 V, 100 A, 0.0029 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP029N06NAKSA1
Newark Part No.47Y8054
Your Part Number
Technical Datasheet
47 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.650 |
| 10+ | $1.610 |
| 100+ | $1.570 |
| 500+ | $1.520 |
| 1000+ | $1.470 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP029N06NAKSA1
Newark Part No.47Y8054
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0029ohm
On Resistance Rds(on)0.0027ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation136W
Power Dissipation Pd136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
- 60V OptiMOS™ power transistor
- Optimized for high performance SMPS, e.g. sync. rec
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Halogen-free according to IEC61249-2-21
- Qualified according to JEDEC for target application
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0029ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
136W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0027ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.8V
Power Dissipation Pd
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65