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IPP024N08NF2SAKMA1
MOSFET, N-CH, 80V, 182A, TO-220 ROHS COMPLIANT: YES
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ManufacturerINFINEON
Manufacturer Part NoIPP024N08NF2SAKMA1
Newark Part No.36AJ3708
Product RangeStrongIRFET 2
Your Part Number
Technical Datasheet
927 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $5.070 |
| 10+ | $2.950 |
| 25+ | $2.890 |
| 50+ | $2.820 |
| 100+ | $2.750 |
| 250+ | $2.710 |
| 500+ | $2.660 |
Price for:Each
Minimum: 1
Multiple: 1
$5.07
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP024N08NF2SAKMA1
Newark Part No.36AJ3708
Product RangeStrongIRFET 2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id182A
On Resistance Rds(on)0.0021ohm
Drain Source On State Resistance2100µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation214W
Power Dissipation Pd214W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET 2
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0021ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
214W
No. of Pins
3Pins
Product Range
StrongIRFET 2
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
182A
Drain Source On State Resistance
2100µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
214W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability