Print Page
IPD122N10N3GATMA1
Power MOSFET, N Channel, 100 V, 59 A, 0.0105 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD122N10N3GATMA1Copy
Manufacturer Standard Lead Time26 weeks
Newark Part No.
Re-Reel85X6027
Cut Tape85X6027
Your Part Number
37,689 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.110 | $2.11 |
| Total Price | $2.11 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.110 |
| 10+ | $1.190 |
| 25+ | $1.110 |
| 50+ | $1.040 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD122N10N3GATMA1Copy
Manufacturer Standard Lead Time26 weeks
Newark Part No.
Re-Reel85X6027
Cut Tape85X6027
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id59A
On Resistance Rds(on)0.0105ohm
Drain Source On State Resistance0.0122ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation94W
Power Dissipation Pd94W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- OptiMOS®3 power transistorIdeal for high frequency switching and synchronous rectification
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance R DS(on)
- Qualified according to JEDEC for target application
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0105ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
94W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
59A
Drain Source On State Resistance
0.0122ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation Pd
94W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate