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IPB80N06S2L07ATMA3
Power MOSFET, N Channel, 55 V, 80 A, 0.0067 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB80N06S2L07ATMA3
Newark Part No.34AC1661
Product RangeOptiMOS Series
Your Part Number
Technical Datasheet
518 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $4.000 |
| 10+ | $2.310 |
| 25+ | $2.240 |
| 50+ | $2.160 |
| 100+ | $2.090 |
| 250+ | $1.960 |
| 500+ | $1.820 |
| 1000+ | $1.630 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80N06S2L07ATMA3
Newark Part No.34AC1661
Product RangeOptiMOS Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0053ohm
Drain Source On State Resistance0.0067ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd210W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0053ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
210W
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
OptiMOS Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.0067ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability