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IPB60R040C7ATMA1
Power MOSFET, N Channel, 600 V, 50 A, 0.034 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB60R040C7ATMA1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Full Reel86AK5175
Re-Reel93AC7103RL
Cut Tape93AC7103
Product RangeCoolMOS C7
Your Part Number
11 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $12.930 | $12.93 |
| Total Price | $12.93 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $12.930 |
| 50+ | $9.790 |
| 100+ | $8.330 |
| 250+ | $8.080 |
| 500+ | $7.880 |
| 1000+ | $7.680 |
| 2500+ | $7.530 |
| 5000+ | $7.370 |
Full Reel
| Quantity | Price |
|---|---|
| 1000+ | $7.450 |
| 3000+ | $7.300 |
| 5000+ | $7.150 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R040C7ATMA1Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Full Reel86AK5175
Re-Reel93AC7103RL
Cut Tape93AC7103
Product RangeCoolMOS C7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id50A
On Resistance Rds(on)0.034ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd227W
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Best in class RDS(on)/package
- Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching losses
- Increased power density solutions due to smaller packages
- Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.034ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
227W
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate