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IPB200N15N3GATMA1
Power MOSFET, N Channel, 150 V, 50 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB200N15N3GATMA1
Newark Part No.60R2679
Also Known AsIPB200N15N3 G, SP000414740
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB200N15N3GATMA1
Newark Part No.60R2679
Also Known AsIPB200N15N3 G, SP000414740
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id50A
Drain Source On State Resistance0.02ohm
On Resistance Rds(on)0.016ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max3V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.016ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.02ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate